? semiconductor components industries, llc, 2000 may, 2000 rev. 4 1 publication order number: mcr100/d preferred device
reverse blocking thyristors pnpn devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. supplied in an inexpensive plastic to-226aa package which is readily adaptable for use in automatic insertion equipment. ? sensitive gate allows triggering by microcontrollers and other logic circuits ? blocking voltage to 600 volts ? onstate current rating of 0.8 amperes rms at 80 c ? high surge current capability e 10 amperes ? minimum and maximum values of igt, vgt and ih specified for ease of design ? immunity to dv/dt e 20 v/ m sec minimum at 110 c ? glass-passivated surface for reliability and uniformity ? device marking: device type, e.g., mcr1003, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 110 c, sine wave, 50 to 60 hz; gate open) mcr1003 mcr1004 mcr1006 mcr1008 v drm, v rrm 100 200 400 600 volts on-state rms current (t c = 80 c) 180 conduction angles i t(rms) 0.8 amp peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 25 c) i tsm 10 amps circuit fusing consideration (t = 8.3 ms) i 2 t 0.415 a 2 s forward peak gate power (t a = 25 c, pulse width 1.0 m s) p gm 0.1 watt forward average gate power (t a = 25 c, t = 8.3 ms) p g(av) 0.10 watt forward peak gate current (t a = 25 c, pulse width 1.0 m s) i gm 1.0 amp reverse peak gate voltage (t a = 25 c, pulse width 1.0 m s) v grm 5.0 volts operating junction temperature range @ rate v rrm and v drm t j 40 to 110 c storage temperature range t stg 40 to 150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 0.8 amperes rms 100 thru 600 volts preferred devices are recommended choices for future use and best overall value. http://onsemi.com to92 (to226aa) case 029 style 10 3 2 1 pin assignment 1 2 3 gate anode cathode k g a see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information
mcr100 series http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance e junction to case e junction to ambient r q jc r q ja 75 200 c/w lead solder temperature ( 1/16 from case, 10 secs max) t l 260 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (1) t c = 25 c (v d = rated v drm and v rrm ; r gk = 1 k w )t c = 110 c i drm , i rrm e e e e 10 100 m a on characteristics peak forward onstate voltage (*) (i tm = 1.0 amp peak @ t a = 25 c) v tm e e 1.7 volts gate tri gger current (continuous dc) (2) t c = 25 c (v ak = 7.0 vdc, r l = 100 ohms) i gt e 40 200 m a holding current (2) t c = 25 c (v ak = 7.0 vdc, initiating current = 20 ma) t c = 40 c i h e e 0.5 e 5.0 10 ma latch current t c = 25 c (v ak = 7.0 v, ig = 200 m a) t c = 40 c i l e e 0.6 e 10 15 ma gate tri gger v oltage (continuous dc) (2) t c = 25 c (v ak = 7.0 vdc, r l = 100 ohms) t c = 40 c v gt e e 0.62 e 0.8 1.2 volts dynamic characteristics critical rate of rise of offstate voltage (v d = rated v drm , exponential waveform, r gk = 1000 ohms, t j = 110 c) dv/dt 20 35 e v/ m s critical rate of rise of onstate current (i pk = 20 a; pw = 10 m sec; dig/dt = 1 a/ m sec, igt = 20 ma) di/dt e e 50 a/ m s *indicates pulse test: pulse width 1.0 ms, duty cycle 1%. (1) r gk = 1000 ohms included in measurement. (2) does not include r gk in measurement.
mcr100 series http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) figure 1. typical gate trigger current versus junction temperature t j , junction temperature ( c) 100 90 80 70 60 50 40 30 110 50 35 20 5 10 25 40 gate trigger current ( a) figure 2. typical gate trigger voltage versus junction temperature t j , junction temperature ( c) 110 65 50 35 20 5 10 25 40 0.8 0.7 0.6 0.5 0.4 0.3 gate trigger voltage (volts) 0.2 20 10 0.9 1.0 95 80 65 95 80
mcr100 series http://onsemi.com 4 dc figure 3. typical holding current versus junction temperature t j , junction temperature ( c) 1000 100 110 65 50 35 20 5 10 25 40 holding current ( a) figure 4. typical latching current versus junction temperature 10 figure 5. typical rms current derating i t(rms) , rms on-state current (amps) 120 110 100 90 80 70 60 50 0.5 0.4 0.3 0.2 0.1 0 t c , maximum allowable case temperature ( c) figure 6. typical onstate characteristics v t , instantaneous on-state voltage (volts) 3.5 3.2 2.3 2.0 1.7 1.4 1.1 0.8 0.5 1 i t , instantaneous onstate current (amps) 0.1 40 10 95 80 t j , junction temperature ( c) 1000 100 110 65 50 35 20 5 10 25 40 latching current ( a) 10 95 80 30 60 90 120 180 2.9 2.6 maximum @ t j = 110 c maximum @ t j = 25 c
mcr100 series http://onsemi.com 5 to92 eia radial tape in fan fold box or on reel h2a h2a h f1 f2 p2 p2 p1 p d w w1 l1 w2 h2b h2b t1 t t2 h4 h5 h1 l figure 7. device positioning on tape specification inches millimeter symbol item min max min max d tape feedhole diameter 0.1496 0.1653 3.8 4.2 d2 component lead thickness dimension 0.015 0.020 0.38 0.51 f1, f2 component lead pitch 0.0945 0.110 2.4 2.8 h bottom of component to seating plane .059 .156 1.5 4.0 h1 feedhole location 0.3346 0.3741 8.5 9.5 h2a deflection left or right 0 0.039 0 1.0 h2b deflection front or rear 0 0.051 0 1.0 h4 feedhole to bottom of component 0.7086 0.768 18 19.5 h5 feedhole to seating plane 0.610 0.649 15.5 16.5 l defective unit clipped dimension 0.3346 0.433 8.5 11 l1 lead wire enclosure 0.09842 e 2.5 e p feedhole pitch 0.4921 0.5079 12.5 12.9 p1 feedhole center to center lead 0.2342 0.2658 5.95 6.75 p2 first lead spacing dimension 0.1397 0.1556 3.55 3.95 t adhesive tape thickness 0.06 0.08 0.15 0.20 t1 overall taped package thickness e 0.0567 e 1.44 t2 carrier strip thickness 0.014 0.027 0.35 0.65 w carrier strip width 0.6889 0.7481 17.5 19 w1 adhesive tape width 0.2165 0.2841 5.5 6.3 w2 adhesive tape position .0059 0.01968 .15 0.5 notes: 1. maximum alignment deviation between leads not to be greater than 0.2 mm. 2. defective components shall be clipped from the carrier tape such that the remaining protrusion (l) does not exceed a maximum of 11 mm. 3. component lead to tape adhesion must meet the pull test requirements. 4. maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. no more than 1 consecutive missing component is permitted. 7. a tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. splices will not interfere with the sprocket feed holes.
mcr100 series http://onsemi.com 6 ordering & shipping information: mcr100 series packaging options, device suffix u.s. europe equivalent shipping description of to92 tape orientation mcr1003,4,6,8 mcr1006rlra mcr1006rlrm mcr1003rl,6rl,8rl mcr1006zl1 bulk in box (5k/box) radial tape and reel (2k/reel) radial tape and fan fold box (2k/box) n/a, bulk round side of to92 and adhesive tape visible flat side of to92 and adhesive tape visible
mcr100 series http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 12.70 l 0.250 6.35 n 0.080 0.105 2.04 2.66 p 0.100 2.54 r 0.115 2.93 v 0.135 3.43 1 style 10: pin 1. cathode 2. gate 3. anode to92 (to226aa) case 02911 issue aj
mcr100 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mcr100/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
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